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4*100G DR4 Silicon Photonic Chip(400G-DR4)

Data Centre 400G-DR4/FR4 Silicon Photonics Hybrid Integrated Chip; Data Centre 800G-DR4/FR4 Silicon Photonics Hybrid Integrated Chip; Silicon Integrated High Speed Electro-Optical Analogue Modulator Chip; etc.


Description:

The 4×100G PAM4 high-integration silicon photonics modulator chip solution integrates four 53Gbaud silicon modulators along with various active and passive silicon photonics components into a single chip. The overall structure is compact and features high density.


400GDR4.jpg

Feature:

·4-channel 4×100Gbps high-speed modulator chip.

·Operating wavelength range: 1290~1330nm.

·High phase modulation efficiency.

·Low modulation chirp.·Compact size.


Parameter:

Input light source1-Laser or 2-Laser input
On-chip loss7.2dB
3dB bandwidth35GHz
Coupling modeEdge coupling
High phase modulation efficiency3mW/Pi
MZM Vπ@DC7V
High ON-OFF ER>20dB
Tx optical waveguide damage power>+17dbm


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