Data Centre 400G-DR4/FR4 Silicon Photonics Hybrid Integrated Chip; Data Centre 800G-DR4/FR4 Silicon Photonics Hybrid Integrated Chip; Silicon Integrated High Speed Electro-Optical Analogue Modulator Chip; etc.
Description:
The 4×100G PAM4 high-integration silicon photonics modulator chip solution integrates four 53Gbaud silicon modulators along with various active and passive silicon photonics components into a single chip. The overall structure is compact and features high density.
Feature:
·4-channel 4×100Gbps high-speed modulator chip.
·Operating wavelength range: 1290~1330nm.
·High phase modulation efficiency.
·Low modulation chirp.·Compact size.
Parameter:
Input light source | 1-Laser or 2-Laser input |
On-chip loss | 7.2dB |
3dB bandwidth | 35GHz |
Coupling mode | Edge coupling |
High phase modulation efficiency | 3mW/Pi |
MZM Vπ@DC | 7V |
High ON-OFF ER | >20dB |
Tx optical waveguide damage power | >+17dbm |
SUZHOU InnovSemi CO.,LTD