INNOV has been acting as an agent of Albis since 2018, jointly promoting products and solutions in the Chinese market with Albis. With its professionalism and rich industry resources, Ecomicro has assisted many photovoltaic customers to successfully adopt Albis products to complete their project development.
Albis Optoelectronics is a leading designer, developer and manufacturer of high-speed single channel and array photodiode components for fiber optic datacom and telecom applications. The diversified product portfolio supports all speeds, from DC to 2.5, 10 and 40 Gbit/s. The fabrication facilities based in Rueschlikon (Zurich) offer full in-house production from front-end to back-end and include a class 100 clean room and extensive test and qualification laboratories. New products for emerging markets as well as customer specific modifications are developed by a team of experienced scientists and engineers. The company focuses on high reliable and high quality products fulfilling Telcordia GR-468 and MIL-STD-883E requirements.
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Suzhou InnovOpto has been acting for albis since 2018 and has cooperated with Albis to promote products and solutions in the Chinese market. With its professionalism and rich industry resources, easy cable micro assisted many optoelectronic customers to successfully adopt Albis product case and complete the project development.
PS40Z4 consists of four InGaAs/InP very high speed photodiode chips, each with integrated backside lens, flip-chip mounted on an Al2O3 carrier. The bottom-illuminated p-i-n photodiode structure is optimized for 56 GBd PAM4 (400BASE-DR4 and 400G-FR4) single-mode telecom, microwave photonic links, RF-over-fiber as well as test and measurement applications. It offers excellent responsivity and high speed of response in the wavelength region from 1260 to 1620nm. The integrated backside lens focuses the incoming light beam on the top side active area. This increases the backside detecting diameter and allows easy optical coupling for angled incidence.
PS60X4 is a Chip on Carrier featuring an InGaAs/InP very high speed photodiode chip with an integrated backside lens. The bottom-illuminated p-i-n photodiode structure is optimized for 112GBd PAM4 (400GbE and 800GbE) single-mode telecom, microwave photonic links, RF-over-fiber as well as test and measurement applications. It offers an excellent responsivity and high speed of response in the wavelength region from 1260 to 1620nm. The integrated backside lens focuses the incoming light beam on the top side active area. This increases the backside detecting diameter and allows easy optical coupling.
Top-side illuminated, ultra high-speed avalanche photodiode (APD) chip. Key features of this innovative APD are a large dynamic range and a high optical damage threshold. The APD chip provides low noise multiplication and a high gain-bandwidth product which enables the design of high sensitivity 28G receivers. Record sensitivities of -25 dBm @ BER of 5E-5 have been demonstrated. Typical applications include 28 Gbaud PAM-4, 100GBASE-ER4 and 25G EPON. The Y-shaped contact pad layout is optimized for wire-bonding. The small chip footprint saves valuable space in small packages such as TO-headers.
SUZHOU InnovSemi CO.,LTD